Bench-marking High Power Switching Performance of $ga_{2}o_{3}$ SBD with SiC Devices

Gallium Oxide ($Ga_{2}O_{3}$) has gained a lot of recent attention as a new power semiconductor material due to its ultra wide band-gap as compared to the conventional semiconductor material. In this context, a simulation study of switching characteristics of the $Ga_{2}O_{3}$ Schottky barrier diode (SBD) is carried out to assess its performance in power application and compared against commercially available SiC SBDs. First, the device modeling is carried out in Silvaco ATLAS followed by the circuit simulation of the modeled device in silvaco mixed mode. From the simulation results performance parameters like on-state loss, off-state loss, transient time, maximum reverse recovery current, and the switching loss is calculated and compared against the SiC diodes. The simulation results indicate the feasibility of the $Ga_{2}O_{3}$ Schottky barrier diode at larger power ratings.