A 92 Ns Settling-Time Fast-Transient Capacitor-Less LDO with a Stable Class B Bandwidth-Boosting Error Amplifier and an Improved Buffer for Mobile Applications
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS(2024)
摘要
This article presents a capacitor-less low-dropout regulator (LDO) using a bandwidth boosting technique, which is based on a stable class B structure, and an improved buffer to achieve a fast transient response. In measurement, this LDO supplies a maximum load current of 300 mA at a dropout voltage of 200 mV and achieves the best normalized figures of merit of 1.52 ns·mV. The proposed LDO is implemented in a 0.5 μ m CMOS process and occupies an area of 0.130 mm 2 .
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关键词
Capacitor-less,fast transient response,low-dropout regulator (LDO),slew-rate (SR)
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