Impact of Back End of Line (BEOL) and Ambient Temperature on Self-Heating in Twin Nanowire Gate-All-Around FETs: Junctionless Mode Versus Inversion Mode

Overall, the impact of BEOL effective thermal resistance $(\mathrm{R}_{\mathrm{T}\mathrm{H}})$ and isothermal ambient temperature $(\mathrm{T}_{\mathrm{A}})$ on the self-heating effect (SHE) in twin nanowire gate-all-around FETs, junctionless (JL) versus inversion mode (IM) are analyzed. The JL device performance is drastically improved by 5.1 % and 11.5 %, respectively, at higher $\mathrm{R}_{\mathrm{T}\mathrm{H}}$ and $\mathrm{T}_{\mathrm{A}}$. However, the IM device performance is traditionally degraded by ~7.4 % and 21.51 %, respectively, at higher $\mathrm{R}_{\mathrm{T}\mathrm{H}}$ and $\mathrm{T}_{\mathrm{A}}$.