Gate voltage modulation of the superconducting state in a degenerate semiconductor

In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to 204 mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the 10 temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by ( k_f l≫ 1 ), suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a 60 bipolar suppression of the supercurrent in our experiments.