High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer

This work demonstrates a high V-TH (+8.4 V) and breakdown voltage (1100 V) Enhancement-mode GaN HEMTs using an Al:HfOx-based charge trapping layer (CTL). The operation mechanism is investigated through TCAD simulation, and the device performance is systematically evaluated through static and dynamic electrical measurements. Thanks to the VTH is tunable by initialization voltage, we prove that the fabricated CTL-based GaN inverters can operate under a variety of conditions (beta=10-40 and V-DD=3 V-15 V) with commendable output swing and noise margins. These results present a promising approach towards to realizing the monolithic integration of GaN devices for power ICs applications.